HFA30PA60CPB, HFA30PB120, HFA30PB120-P Selling Leads, Datasheet
MFG:50000 Package Cooled:VISH D/C:07+
HFA30PA60CPB, HFA30PB120, HFA30PB120-P Datasheet download
Part Number: HFA30PA60CPB
MFG: 50000
Package Cooled: VISH
D/C: 07+
MFG:50000 Package Cooled:VISH D/C:07+
HFA30PA60CPB, HFA30PB120, HFA30PB120-P Datasheet download
MFG: 50000
Package Cooled: VISH
D/C: 07+
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PDF/DataSheet Download
Datasheet: HFA30PA60CPBF
File Size: 245169 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: HFA30PB120
File Size: 148837 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: HFA-0001
File Size: 682937 KB
Manufacturer: INTERSIL [Intersil Corporation]
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International Rectifier's HFA30PB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 30 amps continuous current, the HFA30PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor.These HEXFRED advantages can help to significantly reduce snubbing,component count and heatsink sizes. The HEXFRED HFA30PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
Parameter | Max | Units | |
VR | Cathode-to-Anode Voltage | 1200 | V |
IF @ TC = 100°C | Continuous Forward Current | 30 | A |
IFSM | Single Pulse Forward Current | 120 | |
IFRM | Maximum Repetitive Forward Current | 90 | |
PD @ TC = 25°C | Maximum Power Dissipation | C | |
PD @ TC = 100°C | Maximum Power Dissipation | ||
TJ | Operating Junction and | -55 to +150 | W |
TSTG | Storage Temperature Range |