DescriptionThe features of HFA04TB60SPbF are Ultrafast Recovery, Ultrasoft Recovery, Very Law law, Very Low orr, Specified at Operating Conditions, Lead-Free.
The Benefits of HFA04TB60SPbF are Reduced RFI and EMI, Reduced Power Loss in Diode and Switching Transistor, Higher Frequency Operation, Reduced Snubbing, Reduced Parts Count. International Rectifier's HFAO4TB6OS is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFAO4TB6OS is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recoverytime, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the th portion of recovery.
The HFA04TB60SPbF features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizest The HEXFRED HFAO4TB6OS is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
The absolute maximum ratings of the HFA04TB60SPbF are PD (@Tc= 25°C maximum Power Dissipation)=25W, PD (@Tc= 100°C maximum Power Dissipation)=10W, VR(cathode-to-anode voltage)=600V, IF @TC=100°C(continous forward current)=4.0A, TJ (Operating Junction and)= -55 to + 150°C=TSTG(Storage Temperature Range), RJC( Junction-to-Case )=5.0(max)°C/W, RJA (Thermal resistance, Junction-to-Ambient)= 80(typ)°C/W, Wt(weight)=2.0g/0.07oz.
HFA04TB60SPbF Data Sheet
