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HFA06TB120S, HFA08PB120, HFA08PB120S

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MFG:IR  Package Cooled:.  D/C:06+

HFA06TB120S, HFA08PB120, HFA08PB120S Picture

HFA06TB120S, HFA08PB120, HFA08PB120S Datasheet download

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Part Number: HFA06TB120S

 

MFG: IR

Package Cooled: .

D/C: 06+

 

 

 
 
 
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  • Shantou Chongsheng Electronics Co., Ltd   China
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  • HFA04TB60

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About HFA06TB120S.. Series

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Datasheet: HFA06TB120S.. Series

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HFA08PB120 Suppliers

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  • Shantou Chongsheng Electronics Co., Ltd   China
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  • HFA-0002-5

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  • HFA-0005-5

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  • HFA04SD60

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  • HFA04SD60STRL

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  • HFA04TB60

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  • Shantou Chongsheng Electronics Co., Ltd   China
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About HFA08PB120

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Datasheet: HFA08PB120

File Size: 178575 KB

Manufacturer: IRF [International Rectifier]

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  • HFA-0002-5

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  • CSQ international ltd   China
    Contact: Ms.qianwong   MSN:sophie@csq013.com
    Tel: 86-755-83514456
    Fax: 86-755-83514452
    (0)
  • HFA-0005-5

  • Vendor: Harris Pack: DIP D/C: 01+& Qty: 0 Note: -  Adddate: 2024-11-25
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  • CSQ international ltd   China
    Contact: Ms.qianwong   MSN:sophie@csq013.com
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    Fax: 86-755-83514452
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  • HFA04SD60

  • Vendor: Vishay D/C: 10+& Qty: 4K  Adddate: 2024-11-25
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  • Sunny Technology   Hong
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  • HFA04SD60STRL

  • Vendor: IR Qty: 25000 Note: 0  Adddate: 2024-11-25
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  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)
  • HFA04TB60

  • Vendor: IR Pack: TO D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2024-11-25
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  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
    Tel: 86-020-31651768
    Fax: 86-020-86270358
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  • HFA04TB60PBF

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About HFA-0001

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Datasheet: HFA-0001

File Size: 682937 KB

Manufacturer: INTERSIL [Intersil Corporation]

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HFA06TB120S General Description

HEXFRED® Ultrafast Soft Recovery Diode, 6 A

HFA06TB120S Maximum Ratings

Parameter Max Units
VR Cathode-to-Anode Voltage 1200 V
IF @ TC = 100°C Continuous Forward Current 8.0 A
IFSM Single Pulse Forward Current 80
IFRM Maximum Repetitive Forward Current 24
PD @ TC = 25°C Maximum Power Dissipation 62.5 W
PD @ TC = 100°C Maximum Power Dissipation 25
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150

HFA06TB120S Features

• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

HFA08PB120 General Description

International Rectifier's HFA08PB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs.

In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

HFA08PB120 Maximum Ratings

Parameters Max Units
VR Cathode-to-Anode Voltage 1200 V
IF @ TC = 100°C Continuous Forward Current 8.0 A
IFSM Single Pulse Forward Current 130 A
IFRM Maximum Repetitive Forward Current 32 A
PD @ TC = 25°C Maximum Power Dissipation 73.5 W
PD @ TC = 100°C Maximum Power Dissipation 29
TJ, TSTG Operating Junction and Storage Temperatures - 55 to 150 °C

HFA08PB120 Features

• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions

HFA08PB120 Typical Application

• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

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