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HF10A060ACE, HF10D060ACE, HF10D120ACE

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Part Number: HF10A060ACE

 

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About HF10A060ACE

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Datasheet: HF10A060ACE

File Size: 16594 KB

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About HF100-12

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Datasheet: HF100-12

File Size: 17480 KB

Manufacturer: ASI [Advanced Semiconductor]

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Datasheet: HF10D120ACE

File Size: 32167 KB

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HF10A060ACE General Description

The HF10A060ACE has some electrical characteristics (wafer form).When parameter is VFM,the description is forward voltage,the guaranteed (Min/Max) is 1.7V Max.,the test conditions is TJ = 25,IF = 8.0A.When parameter is BVR,the description is reverse breakdown voltage,the guaranteed (Min/Max) is 600V Min.,the test conditions is TJ = 25,IR = 200A.When parameter is IRM,the description is reverse leakage current,the guaranteed (Min/Max) is 5A Max.,the test conditions is TJ = 25,VR = 600V.

The HF10A060ACE has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 99% Al,1% Si (3 microns).The chip dimensions is 0.090" x 0.090" .The wafer diameter is 125mm,with std.< 100 > flat.The wafer thickness is .015" ± .003".The relevant die mechanical dwg. number is 01-5159.The minimum street width is 100 microns.The reject ink dot size is 0.25 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.

At present there is not too much information about this model.If you are willing to find more  about HF10A060ACE,please pay attention to our web! We will promptly update the relevant  information.



HF10A060ACE Maximum Ratings



HF10A060ACE Features



HF10D120ACE Features

• GEN3 Hexfred Technology
• Low VF
• Low IRR
• Low tRR
• Soft Reverse Recovery

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