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HF100-28, HF100D060ACE, HF10-12F

HF100-28, HF100D060ACE, HF10-12F Selling Leads, Datasheet

MFG:ASI  Package Cooled:500 4L  

HF100-28, HF100D060ACE, HF10-12F Picture

HF100-28, HF100D060ACE, HF10-12F Datasheet download

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Part Number: HF100-28

 

MFG: ASI

Package Cooled: 500 4L

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About HF100-28

PDF/DataSheet Download

Datasheet: HF100-28

File Size: 75704 KB

Manufacturer: ASI [Advanced Semiconductor]

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HF100D060ACE Suppliers

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About HF100-12

PDF/DataSheet Download

Datasheet: HF100-12

File Size: 17480 KB

Manufacturer: ASI [Advanced Semiconductor]

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HF10-12F Suppliers

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About HF10-12F

PDF/DataSheet Download

Datasheet: HF10-12F

File Size: 18749 KB

Manufacturer: ASI [Advanced Semiconductor]

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HF100-28 General Description

The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions.

HF100-28 Maximum Ratings

IC 20 A
VCB 65 V
VCE 36 V
VEBO 4.0 V
PDISS 270 W @ TC = 25
TJ -65 to +200
TSTG -65 to +150
JC 0.65 /W

HF100-28 Features

• PG = 15 dB min. at 100 W/30 MHz
• High linear power output
• IMD3 = -30 dBc max. at 100 W(PEP)
• Omnigold™ Metalization System
• 28 V CE operation

HF10-12F General Description

The ASI HF10-12F is Designed for

HF10-12F Maximum Ratings

IC 4.5 A
VCB 36 V
VCE 36 V
VEBO 4.0 V
PDISS 80 W @ TC = 25
TJ -65 to +200
TSTG -65 to +150
JC 2.2/W

HF10-12F Features

· PG = 20 dB min. at 10 W/30 MHz
· IMD3 = -30 dBc max. at 10 W(PEP)
· Omnigold™ Metalization System

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