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H2N6517, H2N6520, H2N6718L

H2N6517, H2N6520, H2N6718L Selling Leads, Datasheet

Package Cooled:TO92  D/C:TO-92

H2N6517, H2N6520, H2N6718L Picture

H2N6517, H2N6520, H2N6718L Datasheet download

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Part Number: H2N6517

 

MFG: --

Package Cooled: TO92

D/C: TO-92

 

 

 
 
 
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About H2N6517

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Datasheet: H2N6517

File Size: 42253 KB

Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]

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About H2N6520

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Datasheet: H2N6520

File Size: 37721 KB

Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]

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About H2N6718L

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Datasheet: H2N6718L

File Size: 43854 KB

Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]

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H2N6517 General Description

The H2N6517 is designed for general purpose applications requiring high breakdown voltages.

H2N6517 Maximum Ratings

•Maximum Temperatures
Storage Temperature....................................................................................................... -55 ~ +150
Junction Temperature............................................................................................... +150 Maximum
•Maximum Power Dissipation
Total Power Dissipation (Ta=25)............................................................................................ 625 mW
•Maximum Voltages and Currents (Ta=25)
VCBO Collector to Base Voltage................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage.......................................................................................................... 5 V
IC Collector Current .................................................................................................................. 500 mA
IB Base Current ........................................................................................................................ 250 mA

H2N6517 Features

•High Collector-Emitter Breakdown Voltage
•Low Collector-Emitter Saturation Voltage
•The H2N6517 is complementary to H2N6520

H2N6520 General Description

The H2N6520 is designed for general purpose applications requiring high breakdown voltages.

H2N6520 Maximum Ratings

• Maximum Temperatures
Storage Temperature ................................................................................................ -55 ~ +150 °C
Junction Temperature .......................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)........................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA

H2N6520 Features

• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The H2N6520 is complementary to H2N6517

H2N6718L General Description

The H2N6718L is designed for general purpose medium power amplifier and switching applications.

H2N6718L Maximum Ratings

• Maximum Temperatures
Storage Temperature ....................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ........................................................................... 850 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 100 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (Continue) ........................................................................................... 1 A
IC Collector Current (Pulse).................................................................................................. 2 A

H2N6718L Features

• High Power: 850mW
• High Current: 1A

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