H2N5551, H2N5551N, H2N5551-N Selling Leads, Datasheet
Package Cooled:05 D/C:TO-92
H2N5551, H2N5551N, H2N5551-N Datasheet download
Part Number: H2N5551
MFG: --
Package Cooled: 05
D/C: TO-92
H2N5551, H2N5551N, H2N5551-N
- Table of contents:
Info of H2N5551
Info of H2N5551N
Info of H2N5551-N
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About H2N5551
PDF/DataSheet Download
Datasheet: H2N5551
File Size: 38689 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
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About H2N3417
PDF/DataSheet Download
Datasheet: H2N3417
File Size: 35132 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
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About H2N3417
PDF/DataSheet Download
Datasheet: H2N3417
File Size: 35132 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
Download : Click here to Download
H2N5551 General Description
The H2N5551 is designed for amplifier transistor.
H2N5551 Maximum Ratings
•Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
Junction Temperature.................................................................................... +150 Maximum
•Maximum Power Dissipation
Total Power Dissipation (Ta=25)................................................................................ 625 mW
•Maximum Voltages and Currents (Ta=25)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Storage Temperature............................................................................................ -55 ~ +150
Junction Temperature.................................................................................... +150 Maximum
•Maximum Power Dissipation
Total Power Dissipation (Ta=25)................................................................................ 625 mW
•Maximum Voltages and Currents (Ta=25)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
H2N5551 Features
•Complements to PNP Type H2N5401
•High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
•High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
H2N5551-N General Description
The H2N5551-N is a type of pnp epitaxial planar transistor, which is designed for amplifier transistor.
Features of the H2N5551-N are:(1)high collector-emitter breakdown voltage(VCEO>160V (@IC=1mA));(2)compleme nts to PNP type H2N5401.
The absolute maximum ratings and characteristics(Ta=25°C) of the H2N5551-N can be summarized as:(1)maximum temperatures:storage temperature is -55°C+150 °C,junction temperature is +150 °C maximum;(2)maximum powe r dissipation:total power dissipation (Ta=25°C)is 625 mW;(3)maximum voltages and currents (Ta=25°C):VCBO coll ector to base voltage is 180 V,VCEO collector to emitter voltage is 160 V,VEBO emitter to base voltage is 6V,IC coll ector current is 600 mA.characteristics:(1):BVCBO is 180 V min when IC is 100uA and IE is 0;(2)BVCEO is 160V min when IC is 1mA and IB is 0;(3)BVEBO is 6V min when IE is 10uA and IC is 0;(4):ICBO is 50 nA max when VCB is 120V and IE is 0;(5):IEBO is 50 nA max when VEB is 4V and IC is 0;(6):cob is 6 pF max when VCB is 10V and f is 1MHz and IE is 0;(7):VCE(sat)1 is 0.15V when IC is 10mA and IB is 1.0mA.etc.
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