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The H2N4401 is designed for general purpose switching and amplifier applications.
H2N4401 Maximum Ratings
•Maximum Temperatures Storage Temperature........................................................................................................ -55~ +150 Junction Temperature................................................................................................ +150 Maximum •Maximum Power Dissipation Total Power Dissipation (Ta=25).............................................................................................625 mW •Maximum Voltages and Currents (Ta=25) VCBO Collector to Base Voltage.................................................................................................... 60 V VCEO Collector to Emitter Voltage................................................................................................. 40 V VEBO Emitter to Base Voltage......................................................................................................... 5 V IC Collector Current ................................................................................................................. 600 mA
H2N4401 Features
•Complementary to H2N4403 •High Power Dissipation : 625 mW at 25 •High DC Current Gain : 100-300 at 150mA •High Breakdown Voltage : 40 V Min.
H2N4403 General Description
The H2N4403 is designed for general purpose switching and amplifier applications.
H2N4403 Maximum Ratings
• Maximum Temperatures Storage Temperature .................................................................................................. -55 ~ +150 °C Junction Temperature ............................................................................................. +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)......................................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.................................................................................................... -40 V VCEO Collector to Emitter Voltage ................................................................................................ -40 V VEBO Emitter to Base Voltage......................................................................................................... -5 V IC Collector Current .................................................................................................................. -600 mA
H2N4403 Features
• Complementary to H2N4401 • High Power Dissipation : 625mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40V Min.