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The H2N3906 is designed for general purpose switching and amplifier applications.
H2N3906 Maximum Ratings
• Maximum Temperatures Storage Temperature ....................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................. +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................. 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage........................................................................................ -40 V VCEO Collector to Emitter Voltage..................................................................................... -40 V VEBO Emitter to Base Voltage............................................................................................. -5 V IC Collector Current ...................................................................................................... -200 mA
H2N4126 General Description
The H2N4126 is designed for general purpose switching and amplifier applications.
H2N4126 Maximum Ratings
• Maximum Temperatures Storage Temperature ...................................................................................... -55 ~ +150 °C Junction Temperature ............................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................ 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... -25 V VCEO Collector to Emitter Voltage .................................................................................... -25 V VEBO Emitter to Base Voltage ............................................................................................ -4 V IC Collector Current ...................................................................................................... -200 mA
H2N4126 Features
• Complementary to H2N4124 • High Power PT : 625mW at 25°C • High DC Current Gain hFE : 120-360 at IC=2mA