H2KZ9, H2N3904, H2N5401 Selling Leads, Datasheet
MFG:NO Package Cooled:-3 D/C:NO
H2KZ9, H2N3904, H2N5401
- Table of contents:
Info of H2KZ9
Info of H2N3904
Info of H2N5401
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About H2N3904
PDF/DataSheet Download
Datasheet: H2N3904
File Size: 37255 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
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About H2N5401
PDF/DataSheet Download
Datasheet: H2N5401
File Size: 39157 KB
Manufacturer: HSMC [Hi-Sincerity Mocroelectronics]
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H2N3904 General Description
The H2N3904 is designed for general purpose switching and amplifier applications.
H2N3904 Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
Storage Temperature ........................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
H2N5401 General Description
The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
H2N5401 Maximum Ratings
• Maximum Temperatures
Storage Temperature...................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -150 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Storage Temperature...................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage................................................................................... -150 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
H2N5401 Features
• Complements to NPN Type H2N5551
• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
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