GT40M301, GT40Q321, GT40Q322 Selling Leads, Datasheet
MFG:TOS Package Cooled:TO3PL D/C:04+
GT40M301, GT40Q321, GT40Q322 Datasheet download
Part Number: GT40M301
MFG: TOS
Package Cooled: TO3PL
D/C: 04+
GT40M301, GT40Q321, GT40Q322
- Table of contents:
Info of GT40M301
Info of GT40Q321
Info of GT40Q322
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About GT40M301
PDF/DataSheet Download
Datasheet: GT40M301
File Size: 278004 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT40Q321
PDF/DataSheet Download
Datasheet: GT40Q321
File Size: 179869 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT40Q322
PDF/DataSheet Download
Datasheet: GT40Q322
File Size: 85321 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
GT40Q322 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 1200 | V | |
| Gate-emitter voltage | VGES | ±25 | V | |
| Continuous collector current |
@ Tc = 100°C | IC | 20 | A |
| @ Tc = 25°C | 39 | |||
| Pulsed collector current | ICP | 80 | A | |
| Diode forward current | DC | IF | 10 | A |
| Pulsed | IFP | 80 | ||
| Collector power dissipation |
@ Tc = 100°C | PC | 80 | W |
| @ Tc = 25°C | 200 | W | ||
| Junction temperature | Tj | 150 | °C | |
| Storage temperature range | Tstg | -55 to 150 | °C | |
GT40Q322 Typical Application
Enhancement-mode
High speed : tf = 0.14 µs (typ.) (IC = 40A)
FRD included between emitter and collector
The 4th generation
TO-3P(N) (Toshiba package name)
High speed : tf = 0.14 µs (typ.) (IC = 40A)
FRD included between emitter and collector
The 4th generation
TO-3P(N) (Toshiba package name)
GT40Q322 Connection Diagram
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