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GT40Q322

ApplicationEnhancement-mode High speed : tf= 0.14 µs (typ.) (IC= 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name) PinoutSpecifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emit...

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SeekIC No. : 004357035 Detail

GT40Q322: ApplicationEnhancement-mode High speed : tf= 0.14 µs (typ.) (IC= 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name) PinoutSpecifications ...

GT40Q322 Data Sheet

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Part Number:
GT40Q322
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Description



Application

Enhancement-mode
High speed : tf = 0.14 µs (typ.) (IC = 40A)
FRD included between emitter and collector
The 4th generation
TO-3P(N) (Toshiba package name)


Pinout

Connection Diagram


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±25 V
Continuous collector
current
@ Tc = 100°C IC 20 A
@ Tc = 25°C 39
Pulsed collector current ICP 80 A
Diode forward current DC IF 10 A
Pulsed IFP 80
Collector power
dissipation 		@ Tc = 100°C PC 80 W
@ Tc = 25°C 200 W
Junction temperature Tj 150 °C
Storage temperature range Tstg -55 to 150 °C



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