ApplicationEnhancement-mode High speed: tf= 0.30 µs (typ.) (IC= 60 A) Low saturation voltage: VCE (sat)= 1.8 V (typ.) (IC= 60 A) PinoutSpecifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V Gate-emitter voltage VGES ±25 V Collecto...
GT40G121: ApplicationEnhancement-mode High speed: tf= 0.30 µs (typ.) (IC= 60 A) Low saturation voltage: VCE (sat)= 1.8 V (typ.) (IC= 60 A) PinoutSpecifications Characteristics Symbol Rating ...
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Enhancement-mode
High speed: tf = 0.30 µs (typ.) (IC= 60 A)
Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Characteristics | Symbol | Rating | Unit | |
Collector-emitter voltage | VCES | 400 | V | |
Gate-emitter voltage | VGES | ±25 | V | |
Collector current | DC | IC | 40 | A |
1 ms | ICP | 100 | ||
Collector power dissipation | PC | 100 | W | |
Junction temperature | Tj | 150 | °C | |
Storage temperature range | Tstg | -55~150 °C | °C |