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GT40T301

Features: • FRD included between emitter and collector• Enhancement mode type• High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = −20 A/s)• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)Specifications Characteristics ...

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GT40T301: Features: • FRD included between emitter and collector• Enhancement mode type• High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = −20 A/s)R...

GT40T301 Data Sheet

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Part Number:
GT40T301
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Features:

• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = −20 A/s)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 1500 V
Gate-emitter voltage VGES ±25 V
Collector current DC IC 40 A
1 ms ICP 80 A
Emitter-collector forward
current		 DC IECF 30 A
1 ms IECPF 80 A
Collector power dissipation (Tc =
25°C)		 PC 200 W
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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