GT30J101, GT30J121, GT30J301 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:TO-247 D/C:04+
GT30J101, GT30J121, GT30J301 Datasheet download
Part Number: GT30J101
MFG: TOSHIBA
Package Cooled: TO-247
D/C: 04+
GT30J101, GT30J121, GT30J301
- Table of contents:
Info of GT30J101
Info of GT30J121
Info of GT30J301
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About GT30J101
PDF/DataSheet Download
Datasheet: GT30J101
File Size: 298773 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT30J121
PDF/DataSheet Download
Datasheet: GT30J121
File Size: 302018 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT30J301
PDF/DataSheet Download
Datasheet: GT30J301
File Size: 337374 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
GT30J101 Maximum Ratings
| Characteristic | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
| Collector current | DC | IC | 30 | A |
| 1 ms | ICP | 60 | ||
| Collector power dissipation (Tc = 25) |
PC | 155 | W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | −55 to 150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT30J101 Typical Application
• Third-generation IGBT
• Enhancement mode type
• High speed: tf = 0.30 s (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)
• Enhancement mode type
• High speed: tf = 0.30 s (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)
GT30J121 Maximum Ratings
| SYMBOL | PARAMETER | RATING | UNIT |
| VCES | Collector-emitter voltage | 600 | V |
| VGES | Gate-emitter voltage | ±20 | V |
| IC | Collector current DC | 30 | A |
| ICP | Collector current1 ms | 60 | A |
| PC | Collector dissipationTC = 25 | 170 | W |
| Tj | Junction temperature | 150 | |
| Tstg | Storage temperaturerange | -55 to +150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT30J121 Features
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
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