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Application• Third-generation IGBT• Enhancement mode type• High speed: tf = 0.30 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 ...

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SeekIC No. : 004357025 Detail

GT30J101: Application• Third-generation IGBT• Enhancement mode type• High speed: tf = 0.30 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Characteristic S...

GT30J101 Data Sheet

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Part Number:: GT30J101
Supply Ability:: 5000

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Upload time: 2024/11/27

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Standard LED - SMD White 3000K 1600mcd 20mA
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US $.11 - .23 / Piece

Standard LED - SMD White 5000K 2000mcd 20mA
GT3020/L2C-B4556AC2CB2/2T evaluate
US $.1 - .22 / Piece

Standard LED - SMD White 5000K 1800mcd 20mA

Product Details

Description

Application

• Third-generation IGBT
• Enhancement mode type
• High speed: t_f = 0.30 s (max)
• Low saturation voltage: V_{CE (sat)} = 2.7 V (max)

Specifications

Characteristic		Symbol	Rating	Unit
Collector-emitter voltage		V_CES	600	V
Gate-emitter voltage		V_GES	±20	V
Collector current	DC	I_C	30	A
Collector current	1 ms	I_CP	60	A
Collector power dissipation (T_c = 25)		P_C	155	W
Junction temperature		T_j	150
Storage temperature range		T_stg	−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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GT30J101

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