Application• Enhancement mode type• High speed: tf = 0.25s (Typ.) (IC = 50A)• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES...
GT30J122: Application• Enhancement mode type• High speed: tf = 0.25s (Typ.) (IC = 50A)• Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)Specifications Characteristics Symbo...
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Characteristics |
Symbol |
Rating |
Unit | |
Collector-emitter voltage |
VCES |
600 |
V | |
Gate-emitter voltage |
VGES |
± 20 |
V | |
Collector current | DC 1 ms |
IC ICP |
30 100 |
A |
Collector power dissipation (Tc = 25) |
PC |
75 |
W | |
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
-55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).