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GT30J324

Features: • Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference)High speed: tf = 0.05 s (typ.)Low switching loss : Eon = 1.00 mJ (typ.): Eoff = 0.80 mJ (typ.)• Low saturation voltage: VCE (sat) = 2.0 V (typ.)•...

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GT30J324: Features: • Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference)High speed: tf = 0.05 s (typ.)Low switching loss : Eon =...

GT30J324 Data Sheet

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Part Number:
GT30J324
Supply Ability:
5000

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Product Details

Description



Features:

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)High speed: tf = 0.05 s (typ.)Low switching loss : Eon = 1.00 mJ (typ.): Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VEBS
±20
V
Collector current
DC
IC
30
A
1 ms
ICP
60
Emitter-collector forward current
DC
IF
30
A
1 ms
IFP
60
Collector power dissipation
(Tc = 25)
PC
170
W
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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