GT20J321, GT2110, GT2113-01-A Selling Leads, Datasheet
MFG:N/A Package Cooled:NA/ D/C:TO-
GT20J321, GT2110, GT2113-01-A Datasheet download
Part Number: GT20J321
MFG: N/A
Package Cooled: NA/
D/C: TO-
GT20J321, GT2110, GT2113-01-A
- Table of contents:
Info of GT20J321
Info of GT2110
Info of GT2113-01-A
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About GT20J321
PDF/DataSheet Download
Datasheet: GT20J321
File Size: 337736 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT2030HWDMNRNP-V00-LYCX
PDF/DataSheet Download
Datasheet: GT2030HWDMNRNP-V00-LYCX
File Size: 640887 KB
Manufacturer: JHE [Jewel Hill Electronic]
Download : Click here to Download
About GT2030HWDMNRNP-V00-LYCX
PDF/DataSheet Download
Datasheet: GT2030HWDMNRNP-V00-LYCX
File Size: 640887 KB
Manufacturer: JHE [Jewel Hill Electronic]
Download : Click here to Download
GT20J321 Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
| Collector to Base Voltage | VCBO | 600 | V | |
| Collector to Emitter Voltage | VCEO | ±20 | V | |
| Emitter to Base Voltage | VEBO | 20 | V | |
| Collect Current | DC | IC | 40 | A |
| 1 ms | ICP | 20 | A | |
| Emitter-collector forward current |
DC | IF | 40 | mA |
| 1 ms | IFM | 40 | ||
| Collector power dissipation |
PC |
45 |
W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55 ~ +150 | ||
GT20J321 Features
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.04 s (typ.)
Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.04 s (typ.)
Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
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