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GT20J321_1219277

Application• The 4th generation • Enhancement-mode • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 µs (typ.) Low switching loss : Eon = 0.40 mJ (typ.): Eoff = 0.43 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) ...

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SeekIC No. : 004357004 Detail

GT20J321_1219277: Application• The 4th generation • Enhancement-mode • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 µs (typ.) Low switching loss : E...

GT20J321_1219277 Data Sheet

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Part Number:
GT20J321_1219277
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5000

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Product Details

Description



Application

•  The 4th generation
•  Enhancement-mode
•  Fast switching (FS): Operating frequency up to 50 kHz (reference) 
    High speed: tf = 0.04 µs (typ.)
    Low switching loss  : Eon = 0.40 mJ (typ.) 
                                   : Eoff = 0.43 mJ (typ.)
•  Low saturation voltage: VCE (sat) = 2.0 V (typ.)
•  FRD included between emitter and collector


Specifications

Characteristics Symbol Limits Unit
Collector-emitter voltage VDSS 600 V
Gate-emitter voltage VGSS ±20 V
Collector current DC IC 20 A
1ms ICP 40
Emitter-collector forward
current 		DC IF 20 A
1ms IFM 40
Total power dissipation (Tc=25°C) PC 45 W
Junction temperature Tj 150
Storage temperature range Tstg −55 to 150



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