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GT20J101

Application• Third-generation IGBT• Enhancement mode type• High speed: tf = 0.30 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitte...

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GT20J101: Application• Third-generation IGBT• Enhancement mode type• High speed: tf = 0.30 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Characteristi...

GT20J101 Data Sheet

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Part Number:
GT20J101
Supply Ability:
5000

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Product Details

Description



Application

• Third-generation IGBT
• Enhancement mode type
• High speed: tf = 0.30 s (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VEBS
±20
V
Collector current
DC
IC
20
A
1 ms
ICP
40
Collector power dissipation
(Tc = 25)
PC
130
W
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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