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GT20J301

Application` Third-generation IGBT` Enhancement mode type` High speed : tf = 0.30s (Max.)` Low saturation voltage : VCE (sat) = 2.7V (Max.)` FRD included between emitter and collectorSpecifications Characteristics Symbol Rating Unit Collector−Emitter Voltage VCES 600 ...

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GT20J301: Application` Third-generation IGBT` Enhancement mode type` High speed : tf = 0.30s (Max.)` Low saturation voltage : VCE (sat) = 2.7V (Max.)` FRD included between emitter and collectorSpecifications ...

GT20J301 Data Sheet

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Part Number:
GT20J301
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/12/20

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Product Details

Description



Application

`  Third-generation IGBT
`  Enhancement mode type
`  High speed : tf = 0.30s (Max.)
`  Low saturation voltage : VCE (sat) = 2.7V (Max.)
`  FRD included between emitter and collector


Specifications

Characteristics
Symbol
Rating
Unit
Collector−Emitter Voltage
VCES
600
V
Gate−Emitter Voltage
VGES
±20
V
Collector Current DC
IC
20
A
1ms
ICP
40
A
Emitter−Collector Forward
Current		 DC
IF
20
A
1ms
IFM
40
A
Collector Power Dissipation
(Tc = 25)
PC
130
W
Junction temperature
Tj
150
Storage temperature range
Tstg
-55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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