GT10J312, GT10J312(SM), GT10J321 Selling Leads, Datasheet
MFG:TOHSIBA Package Cooled:TO- D/C:02+
GT10J312, GT10J312(SM), GT10J321 Datasheet download
Part Number: GT10J312
MFG: TOHSIBA
Package Cooled: TO-
D/C: 02+
GT10J312, GT10J312(SM), GT10J321
- Table of contents:
Info of GT10J312
Info of GT10J312(SM)
Info of GT10J321
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About GT10J312
PDF/DataSheet Download
Datasheet: GT10J312
File Size: 302207 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT10J312(SM)
PDF/DataSheet Download
Datasheet: GT10J312(SM)
File Size: 302207 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT10J321
PDF/DataSheet Download
Datasheet: GT10J321
File Size: 162505 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
GT10J312 Maximum Ratings
|
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
| Collector−Emitter Voltage |
VCES |
600 |
V | |
| Gate−Emitter Voltage |
VGES |
±20 |
V | |
| Collector Current | DC |
IC |
10 |
A |
| 1ms |
ICP |
20 |
A | |
| Emitter−Collector Forward Current |
DC |
IF |
10 |
A |
| 1ms |
IFM |
20 |
A | |
| Collector Power Dissipation (Tc = 25) |
PC |
60 |
W | |
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature Range |
Tstg |
-55~150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT10J312 Features
* Third-generation IGBT
* Enhancement mode type
* High speed : tf = 0.30s (Max.)
* Low saturation voltage : VCE (sat) = 2.7V (Max.)
* FRD included between emitter and collector
* Enhancement mode type
* High speed : tf = 0.30s (Max.)
* Low saturation voltage : VCE (sat) = 2.7V (Max.)
* FRD included between emitter and collector
GT10J321 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | ±25 | V | |
| Continuous Collector current |
@ Tc = 100 | IC | 5 | A |
| @ Tc = 25 | 10 | |||
| Pulsed collector current | ICP | 20 | A | |
| Diode forward current | DC | IF | 10 | A |
| Pulsed | IFP | 20 | ||
| Collector power dissipation |
@ Tc = 100 | PC | 11 | W |
| @ Tc = 25 | 29 | |||
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | −55~150 | ||
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
GT10J321 Typical Application
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.03 s (typ.)
• Low switching loss : Eon = 0.26 mJ (typ.)
: Eoff = 0.18 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.03 s (typ.)
• Low switching loss : Eon = 0.26 mJ (typ.)
: Eoff = 0.18 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
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