DescriptionThe GT100LA120UX is designed as one kind of low side choppers IGBT SOT-227 (trench IGBT) with current of 100A. It is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.GT100LA120UX has eleve...
GT100LA120UX: DescriptionThe GT100LA120UX is designed as one kind of low side choppers IGBT SOT-227 (trench IGBT) with current of 100A. It is designed for increased operating efficiency in power conversion: UPS...
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The GT100LA120UX is designed as one kind of "low side choppers" IGBT SOT-227 (trench IGBT) with current of 100A. It is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.
GT100LA120UX has eleven features. (1)Trench IGBT technology. (2)Very low Vce(on). (3)Square RBSOA. (4)HEXFRED clamping diode. (5)10s short circuit capability. (6)Fully isolated package. (7)Speed 4kHz to 30kHz. (8)Very low internal inductance (5nH typical). (9)Industry standard outline. (10)UL approved file E78996 . (11)Compliant to RoHS directive 2002/95/EC. Those are all the main features.
Some absolute maximum ratings of GT100LA120UX have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 134A at Tc=25°C and would be 92A at Tc=80°C. (3)Its pulsed collector current would be 270A. (4)Its clamped inductive load current would be 270A. (5)Its diode continuous forward current would be 87A at Tc=25°C and would be 59A at Tc=80°C. (6)Its gate to emitter voltage would be +/-20V. (7)Its power dissipation, IGBT would be 463W at Tc=25°C and would be 260W at Tc=80°C. (8)Its power dissipation, diode would be 338W at Tc=25°C and would be 190W at Tc=80°C. (9)Its RMS isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of GT100LA120UX are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 5V, typ 5.8V and max 7V. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GT100LA120UX please contact us for details. Thank you!