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GT10G131

Application• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure) IGBT• Enhancement-mode• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)• Peak collector current: IC = 200 A (max)• Built-in zene...

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SeekIC No. : 004356971 Detail

GT10G131: Application• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure) IGBT• Enhancement-mode• 4-V gate drive voltage: ...

GT10G131 Data Sheet

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Part Number:
GT10G131
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Product Details

Description



Application

• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
• Peak collector current: IC = 200 A (max)
• Built-in zener diode between gate and emitter
• SOP-8 package


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 400 V
Gate-emitter voltage DC VGES ± 6 V
Pulse VGES ± 8 V
Collector current Pulse
(Note 1)		 ICP 200 A
Collector power
dissipation(t=10 s)		 (Note 2a) PC (1) 1.9 W
Note 2b) PC (2) 1.0 W
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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