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GT10J301, GT10J303, GT10J311

Table of contents:
Info of GT10J301
Info of GT10J303
Info of GT10J311

GT10J301, GT10J303, GT10J311 Selling Leads, Datasheet

MFG:TOS Package Cooled:TO-3P D/C:N.A

GT10J301, GT10J303, GT10J311 Datasheet download

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Part Number: GT10J301

MFG: TOS

Package Cooled: TO-3P

D/C: N.A

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GT10J301 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Collector−Emitter Voltage		V_CES	600	V
Gate−Emitter Voltage		V_GES	±20	V
Collector Current	DC	I_C	10	A
Collector Current	1ms	I_CP	20	A
Emitter−Collector Forward Current	DC	I_F	10	A
Emitter−Collector Forward Current	1ms	I_FM	20	A
Collector Power Dissipation (Tc = 25)		P_C	90	W
Junction temperature		T_j	150
Storage temperature range		T_stg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT10J301 Typical Application

` Third-generation IGBT
` Enhancement mode type
` High speed : t_f= 0.30s (Max.)
` Low saturation voltage : V_{CE (sat)} = 2.7V (Max.)
` FRD included between emitter and collector

GT10J303 General Description

GT10J303 Maximum Ratings

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector−Emitter Voltage		V_CES	600	V
Gate-Emitter Voltage		V_GES	±20	V
Collector Current	DC	I_C	10	A
Collector Current	1ms	I_CP	20	A
Emitter−Collector Forward Current	DC	I_F	10	A
Emitter−Collector Forward Current	1ms	I_FM	20	A
Collector Power Dissipation (Tc = 25°C)		P_C	30	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	−55~150

GT10J303 Features

`Third-generation IGBT
`Enhancement mode type
`High speed : tf = 0.30s (Max.) (I_C= 10A)
`Low saturation voltage : V_CE (sat) = 2.7V (Max.) (I_C= 10A)
`FRD included between emitter and collector

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