Position: Home > DataSheet > Index F > FQP Series > FQPF8N80C, FQPF8N90C, FQPF8P10

Low Cost Custom Prototype PCB Manufacturer

FQPF8N80C, FQPF8N90C, FQPF8P10

Table of contents:
Info of FQPF8N80C
Info of FQPF8N90C
Info of FQPF8P10

FQPF8N80C, FQPF8N90C, FQPF8P10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:06+

FQPF8N80C, FQPF8N90C, FQPF8P10 Datasheet download

Five Points

Part Number: FQPF8N80C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 06+

Description: MOSFET P-CH 100V 5.3A TO-220F

Price Break

1000

Unit Price

.68250

Extended Price

682.50

(All prices are in USD) Prices for reference only

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FQPF8N80C Parameters

Technical/Catalog Information	FQPF8N80C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1.55 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	2050pF @ 25V
Power - Max	59W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF8N80C FQPF8N80C

FQPF8N80C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQPF8N80C Maximum Ratings

Symbol	Parameter	FQP8N80C	FQPF8N80C	Units
V_DSS	Drain-Source Voltage	800		V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C= 100°C)	8	8 *	A
I_D		5.1	5.1 *	A
I_DM	Drain Current - Pulsed (Note 1)	32	32 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	850		mJ
I_AR	Avalanche Current (Note 1)	8		A
E_AR	Repetitive Avalanche Energy (Note 1)	17.5		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	178	59	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	1.43	0.48	W/°C
TJ, T_STG	Operating and Storage Temperature Range	-55to+150		°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 25mH, I_AS = 8A, V_DD= 50V, RG = 25 Ω, Starting T_J = 25°C
3. I_SD 8A, di/dt 200A/µs, V_DD B_VDSS, Starting T_J= 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature

FQPF8N80C Features

• 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF8N90C Parameters

Technical/Catalog Information	FQPF8N90C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	6.3A
Rds On (Max) @ Id, Vgs	1.9 Ohm @ 3.15A, 10V
Input Capacitance (Ciss) @ Vds	2080pF @ 25V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF8N90C FQPF8N90C

FQPF8N90C General Description

FQPF8N90C Maximum Ratings

Symbol	Parameter	FQP8N90C	FQP8N90C	Units
V_DSS	Drain-Source Voltage	900		V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C = 100)	6.3	6.3*	A
I_D		3.8	3.8*	A
I_DM	Drain Current - Pulsed (Note 1)	25	25*	A
V_GSS	Gate-Source Voltage	±30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	850		mJ
I_AR	Avalanche Current (Note 1)	6.3		A
E_AR	Repetitive Avalanche Energy (Note 1)	17.1		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	171	60	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	1.37	0.48	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

FQPF8N90C Features

• 6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF8P10 Parameters

Technical/Catalog Information	FQPF8P10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	5.3A
Rds On (Max) @ Id, Vgs	530 mOhm @ 2.65A, 10V
Input Capacitance (Ciss) @ Vds	470pF @ 25V
Power - Max	28W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF8P10 FQPF8P10

FQPF8P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQPF8P10 Maximum Ratings

Symbol	Parameter	FQPF8P10	Units
V_DSS	Drain-Source Voltage	-100	V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C = 100)	-5.3	A
I_D		-3.8	A
I_DM	Drain Current - Pulsed (Note 1)	-21.2	A
V_GSS	Gate-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	150	mJ
I_AR	Avalanche Current (Note 1)	-5.3	A
E_AR	Repetitive Avalanche Energy (Note 1)	2.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-6.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	28	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.19	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

FQPF8P10 Features

• -5.3A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components