Position: Home > DataSheet > Index F > FQP Series > FQPF8N60, FQPF8N60C, FQPF8N60CF

Low Cost Custom Prototype PCB Manufacturer

FQPF8N60, FQPF8N60C, FQPF8N60CF

Table of contents:
Info of FQPF8N60
Info of FQPF8N60C
Info of FQPF8N60CF

FQPF8N60, FQPF8N60C, FQPF8N60CF Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:to-220 D/C:07+

FQPF8N60, FQPF8N60C, FQPF8N60CF Datasheet download

Five Points

Part Number: FQPF8N60C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: to-220

D/C: 07+

Description: MOSFET N-CH 600V 7.5A TO-220F

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

FQPF8N60C Parameters

Technical/Catalog Information	FQPF8N60C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 3.75A, 10V
Input Capacitance (Ciss) @ Vds	1255pF @ 25V
Power - Max	48W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF8N60C FQPF8N60C

FQPF8N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQPF8N60C Maximum Ratings

Symbol	Parameter	FQP8N60C	FQP8N60C	Units
V_DSS	Drain-Source Voltage	600		V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C = 100)	7.5	7.5*	A
I_D		4.6	4.6*	A
I_DM	Drain Current - Pulsed (Note 1)	30	30*	A
V_GSS	Gate-Source Voltage	±30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	230		mJ
I_AR	Avalanche Current (Note 1)	7.5		A
E_AR	Repetitive Avalanche Energy (Note 1)	14.7		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	147	48	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	1.18	0.38	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

FQPF8N60C Features

· 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
· Low gate charge ( typical 28 nC)
· Low Crss ( typical 12 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability

FQPF8N60CF General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

FQPF8N60CF Maximum Ratings

Parameter	Parameter	Value	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current- Continuous (T_C = 25°C)	6.26	A
I_D	- Continuous (T_C = 25°C)	3.96	A
I_DM	Drain Current - Pulsed (Note 1)	25	A
P_D	Power Dissipation (T_C = 25°C)	147	W
P_D	- Derate above 25°C	1.18	W/
E_AS	Single Pulsed Avalanche Energy (Note 2)	160	mJ
I_AR	Avalanche Current (Note 1)	6.26	A
E_AR	Repetitive Avalanche Energy (Note 1)	14.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
T_j, T_stg	Operating Junction Temperature Range	-55 to +150
T_L	Storage Temperature Range	300

FQPF8N60CF Features

• 6.26A, 600V, R_DS(on) = 1.5 @V_GS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components