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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C
* Drain current limited by maximum junction temperature.
FQPF7P06 Parameters
Technical/Catalog Information
FQPF7P06
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
P-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25° C
5.3A
Rds On (Max) @ Id, Vgs
410 mOhm @ 2.65A, 10V
Input Capacitance (Ciss) @ Vds
295pF @ 25V
Power - Max
24W
Packaging
Tube
Gate Charge (Qg) @ Vgs
8.2nC @ 10V
Package / Case
TO-220F
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FQPF7P06 FQPF7P06
FQPF7P06 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.