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FQPF7N60C, FQPF7N65C, FQPF7N80

Table of contents:
Info of FQPF7N60C
Info of FQPF7N65C
Info of FQPF7N80

FQPF7N60C, FQPF7N65C, FQPF7N80 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:06+ D/C:12000

FQPF7N60C, FQPF7N65C, FQPF7N80 Datasheet download

Five Points

Part Number: FQPF7N65C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 06+

D/C: 12000

Description: MOSFET N-CH 800V 3.8A TO-220F

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FQPF7N65C Parameters

Technical/Catalog Information	FQPF7N65C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	1245pF @ 25V
Power - Max	52W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF7N65C FQPF7N65C

FQPF7N65C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQPF7N65C Maximum Ratings

Symbol	Parameter	FQP7N65C	FQPF7N65C	Units
V_DSS	Drain-Source Voltage	650		V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C = 100)	7	7*	A
I_D		4.2	4.2*	A
I_DM	Drain Current - Pulsed (Note 1)	28	28*	A
V_GSS	Gate-Source Voltage	±30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	212		mJ
I_AR	Avalanche Current (Note 1)	7		A
E_AR	Repetitive Avalanche Energy (Note 1)	1.6		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	160	52	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	1.28	0.42	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

FQPF7N65C Features

·7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
·Low gate charge ( typical 28 nC)
·Low Crss ( typical 12 pF)
·Fast switching
·100% avalanche tested
·Improved dv/dt capability

FQPF7N80 Parameters

Technical/Catalog Information	FQPF7N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 1.9A, 10V
Input Capacitance (Ciss) @ Vds	1850pF @ 25V
Power - Max	56W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF7N80 FQPF7N80

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