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FQPF70N08, FQPF70N10, FQPF7N10

Table of contents:
Info of FQPF70N08
Info of FQPF70N10
Info of FQPF7N10

FQPF70N08, FQPF70N10, FQPF7N10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FQPF70N08, FQPF70N10, FQPF7N10 Datasheet download

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Part Number: FQPF70N10

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 100V 5.5A TO-220F

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FQPF70N08 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQPF70N08 Maximum Ratings

Symbol	Parameter	FQPF70N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	43.6	A
ID		30.8	A
IDM	Drain Current - Pulsed (Note 1)	174.4	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1150	mJ
IAR	Avalanche Current (Note 1)	43.6	A
EAR	Repetitive Avalanche Energy (Note 1)	6.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	60	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	0.4	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

FQPF70N08 Features

• 43.6A, 80V, RDS(on) = 0.017Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 180 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQPF70N10 Parameters

Technical/Catalog Information	FQPF70N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	23 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 25V
Power - Max	62W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF70N10 FQPF70N10

FQPF70N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQPF70N10 Maximum Ratings

Symbol	Parameter	FQPF70N10	Units
V_DSS	Drain-Source Voltage	100	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	35	A
I_D		24.7	A
I_DM	Drain Current - Pulsed (Note 1)	140	A
V_GSS	Gate-Source Voltage	±	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1300	mJ
I_AR	Avalanche Current (Note 1)	35	A
E_AR	Repetitive Avalanche Energy (Note 1)	6.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	62	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.41	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF70N10 Features

* 35A, 100V, R_DS(on) = 0.023 @V_GS = 10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical 150 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQPF7N10 Parameters

Technical/Catalog Information	FQPF7N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	350 mOhm @ 2.75A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	23W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7.5nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF7N10 FQPF7N10

FQPF7N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize 0n-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio mplifiers, high efficiency switching DC/DC converters, and DC motor control.

FQPF7N10 Maximum Ratings

Symbol	Parameter	FQPF7N10	Units
V_DSS	Drain-Source Voltage	100	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	5.5	A
I_D		3.89	A
I_DM	Drain Current - Pulsed (Note 1)	22	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	50	mJ
I_AR	Avalanche Current (Note 1)	5.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	2.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	23	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.15	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF7N10 Features

* 5.5A, 100V, R_DS(on) = 0.35 @V_GS = 10 V
* Low gate charge ( typical 5.8 nC)
* Low Crss ( typical 10 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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