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FQPF6N90, FQPF6N90C, FQPF6P25

Table of contents:
Info of FQPF6N90
Info of FQPF6N90C
Info of FQPF6P25

FQPF6N90, FQPF6N90C, FQPF6P25 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:TO

FQPF6N90, FQPF6N90C, FQPF6P25 Datasheet download

Five Points

Part Number: FQPF6N90

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: TO

Description: MOSFET P-CH 250V 4.2A TO-220F

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FQPF6N90 Parameters

Technical/Catalog Information	FQPF6N90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	1.9 Ohm @ 1.7A, 10V
Input Capacitance (Ciss) @ Vds	1880pF @ 25V
Power - Max	56W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6N90 FQPF6N90

FQPF6N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQPF6N90 Maximum Ratings

Symbol	Parameter	FQPF6N90	Units
V_DSS	Drain-Source Voltage	900	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	3.4	A
I_D		2.1	A
I_DM	Drain Current - Pulsed (Note 1)	13.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	710	mJ
I_AR	Avalanche Current (Note 1)	3.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	5.6	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	56	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.45	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF6N90 Features

* 3.4A, 900V, R_DS(on) = 1.9 @V_GS = 10 V
* Low gate charge ( typical 40 nC)
* Low Crss ( typical 17 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FQPF6N90C Parameters

Technical/Catalog Information	FQPF6N90C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2.3 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1770pF @ 25V
Power - Max	56W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6N90C FQPF6N90C

FQPF6N90C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

FQPF6N90C Maximum Ratings

Symbol	Parameter	FQP6N90C/FQPF6N90C		Units
VDSS	Drain-Source Voltage	900		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	6	6*	A
ID		3.8	3.8*	A
IDM	Drain Current - Pulsed (Note 1)	24	24*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	650		mJ
IAR	Avalanche Current (Note 1)	6		A
EAR	Repetitive Avalanche Energy (Note 1)	16.7		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	167	56	W
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	1.43	0.48	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

FQPF6N90C Features

• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF6P25 Parameters

Technical/Catalog Information	FQPF6P25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	4.2A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 2.1A, 10V
Input Capacitance (Ciss) @ Vds	780pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6P25 FQPF6P25

FQPF6P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQPF6P25 Maximum Ratings

Symbol	Parameter	FQPF6P25	Units
V_DSS	Drain-Source Voltage	-250	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-4.2	A
I_D		-1.78	A
I_DM	Drain Current - Pulsed (Note 1)	-16.8	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	540	mJ
I_AR	Avalanche Current (Note 1)	-4.2	A
E_AR	Repetitive Avalanche Energy (Note 1)	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	45	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.36	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF6P25 Features

• -4.2A, -250V, R_DS(on) = 1.1Ω @V_GS = -10 V
• Low gate charge ( typical 21 nC)
• Low C_rss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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