MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+
FQPF6N70, FQPF6N80, FQPF6N80C Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220F
D/C: 09+
Description: MOSFET N-CHAN 800V 5.5A TO-220F
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PDF/DataSheet Download
Datasheet: FQPF6N70
File Size: 573764 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF6N80
File Size: 681907 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF6N80C
File Size: 911276 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQPF6N70 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) @ 25° C | 3.5A |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 25V |
| Power - Max | 48W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF6N70 FQPF6N70 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter | FQPF6N70 | Units |
| VDSS | Drain-Source Voltage | 700 |
V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
3.5 | A |
| 2.2 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 14 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 600 | mJ |
| IAR | Avalanche Current (Note 1) | 3.5 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
4.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
48 | W |
| 0.39 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQPF6N80 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 3.3A |
| Rds On (Max) @ Id, Vgs | 1.95 Ohm @ 1.65A, 10V |
| Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
| Power - Max | 51W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF6N80 FQPF6N80 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter | FQPF6N80 | Units |
| VDSS | Drain-Source Voltage | 800 |
V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
3.3 | A |
| 2.1 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 13.2 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 680 | mJ |
| IAR | Avalanche Curren (Note 1) | 3.3 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
5.1 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
51 | W |
| 0.41 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQPF6N80C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1310pF @ 25V |
| Power - Max | 51W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF6N80C FQPF6N80C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
| Symbol | Parameter |
FQP6N80C/FQPF6N80C |
Units | |
| VDSS | Drain-Source Voltage |
100 |
V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
5.5 |
5.5* |
A |
|
3.2 |
3.2* |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
22 |
22* |
A |
| VGSS | Gate-Source Voltage |
±30 |
V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
680 |
mJ | |
| IAR | Avalanche Current (Note 1) |
5.5 |
A | |
| EAR | Repetitive Avalanche Energy (Note 1) |
15.8 |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
158 |
51 |
W |
|
1.27 |
0.41 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
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