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FQPF6N50, FQPF6N60, FQPF6N60C

Table of contents:
Info of FQPF6N50
Info of FQPF6N60
Info of FQPF6N60C

FQPF6N50, FQPF6N60, FQPF6N60C Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:06+

FQPF6N50, FQPF6N60, FQPF6N60C Datasheet download

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Part Number: FQPF6N50

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 06+

Description: MOSFET N-CH 600V 5.5A TO-220F

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FQPF6N50 Parameters

Technical/Catalog Information	FQPF6N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds	790pF @ 25V
Power - Max	42W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6N50 FQPF6N50

FQPF6N60 Parameters

Technical/Catalog Information	FQPF6N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 25V
Power - Max	44W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6N60 FQPF6N60

FQPF6N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQPF6N60 Maximum Ratings

Symbol	Parameter	FQPF6N60	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	3.6	A
I_D		2.3	A
I_DM	Drain Current - Pulsed (Note 1)	14.4	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	440	mJ
I_AR	Avalanche Current (Note 1)	3.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	4.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	44	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.35	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 62mH, I_AS = 3.6A, V_DD = 50V, R_G= 25 , Starting T_J= 25°C
3. I_SD 6.2A, di/dt 200A/s, V_DD BV_DSS, Starting T_J= 25°C

FQPF6N60 Features

• 3.6A, 600V, R_DS(on) = 1.5 @V_GS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF6N60C Parameters

Technical/Catalog Information	FQPF6N60C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	2 Ohm @ 2.75A, 10V
Input Capacitance (Ciss) @ Vds	810pF @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6N60C FQPF6N60C

FQPF6N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQPF6N60C Maximum Ratings

Symbol	Parameter	FQP6N60C	FQPF6N60C	Units
V_DSS	Drain-Source Voltage	600		V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	5.5	5.5*	A
I_D		3.3	3.3*	A
I_DM	Drain Current - Pulsed (Note 1)	22	22*	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	300		mJ
I_AR	Avalanche Current (Note 1)	5.5		A
E_AR	Repetitive Avalanche Energy (Note 1)	12.5		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	125	40	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	1.0	0.31	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175		°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

* Drain current limited by maximum junction temperature.
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.2mH, I_AS = 5.5 A, V_DD = 50V, R_G = 25 , Starting T_J= 25°C
3. I_SD 5.5A, di/dt 200A/s, V_DD BV_DSS, Starting T_J= 25°C

FQPF6N60C Features

` 5.5A, 600V, R_DS(on) = 2.0 @V_GS = 10 V
` Low gate charge ( typical 16 nC)
` Low Crss ( typical 7 pF)
` Fast switching
` 100% avalanche tested
` Improved dv/dt capability

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