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FQPF5N90C, FQPF5P10, FQPF5P20

Table of contents:
Info of FQPF5N90C
Info of FQPF5P10
Info of FQPF5P20

FQPF5N90C, FQPF5P10, FQPF5P20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:09+ D/C:09+

FQPF5N90C, FQPF5P10, FQPF5P20 Datasheet download

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Part Number: FQPF5P10

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 09+

D/C: 09+

Description: MOSFET P-CH 200V 3.4A TO-220F

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FQPF5P10 Parameters

Technical/Catalog Information	FQPF5P10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	2.9A
Rds On (Max) @ Id, Vgs	1.05 Ohm @ 1.45A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	23W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.2nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF5P10 FQPF5P10

FQPF5P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQPF5P10 Maximum Ratings

Symbol	Parameter	FQPF22P10	Units
V_DSS	Drain-Source Voltage	-100	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-2.9	A
I_D		-2.08	A
I_DM	Drain Current - Pulsed (Note 1)	-11.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	55	mJ
I_AR	Avalanche Current (Note 1)	-2.9	A
E_AR	Repetitive Avalanche Energy (Note 1)	2.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-6.0	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	23	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.15	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.8mH, I_AS = -2.9A, V_DD = -25V, R_G = 25 , Starting T_J = 25°C
3. I_SD -4.5A, di/dt 300A/s, V_DD BV_DSS, Starting T_J = 25°C

FQPF5P10 Features

• -2.9A, -100V, R_DS(on) = 1.05 @V_GS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQPF5P20 Parameters

Technical/Catalog Information	FQPF5P20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 1.7A, 10V
Input Capacitance (Ciss) @ Vds	430pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF5P20 FQPF5P20

FQPF5P20 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQPF5P20 Maximum Ratings

Symbol	Parameter	FQPF5P20	Units
V_DSS	Drain-Source Voltage	-200	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-3.4	A
I_D		-2.15	A
I_DM	Drain Current - Pulsed (Note 1)	-13.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	330	mJ
I_AR	Avalanche Current (Note 1)	-3.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	38	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.3	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF5P20 Features

• -3.4A, -200V, R_DS(on) = 1.4Ω @V_GS = -10 V
• Low gate charge ( typical 10 nC)
• Low C_rss ( typical 12 pF)
• Fast switching
• 100% avalanche tested

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