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FQPF4N20L, FQPF4N25, FQPF4N50

Table of contents:
Info of FQPF4N20L
Info of FQPF4N25
Info of FQPF4N50

FQPF4N20L, FQPF4N25, FQPF4N50 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+

FQPF4N20L, FQPF4N25, FQPF4N50 Datasheet download

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Part Number: FQPF4N20L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 09+

Description: MOSFET N-CH 500V 2.3A TO-220F

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FQPF4N20L Parameters

Technical/Catalog Information	FQPF4N20L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	1.35 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	310pF @ 25V
Power - Max	27W
Packaging	Tube
Gate Charge (Qg) @ Vgs	5.2nC @ 5V
Package / Case	TO-220F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF4N20L FQPF4N20L

FQPF4N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.s These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, and motor control.

FQPF4N20L Maximum Ratings

Symbol	Parameter	FQPF4N20L	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	3.0	A
I_D		1.9	A
I_DM	Drain Current - Pulsed (Note 1)	12	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	52	mJ
I_AR	Avalanche Current (Note 1)	3.0	A
E_AR	Repetitive Avalanche Energy (Note 1)	2.7	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	27	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.22	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF4N20L Features

• 3.0A, 200V, R _DS(on) = 1.35Ω @V_GS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low C_rss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers

FQPF4N25 Parameters

Technical/Catalog Information	FQPF4N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	1.75 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	200pF @ 25V
Power - Max	32W
Packaging	Tube
Gate Charge (Qg) @ Vgs	5.6nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF4N25 FQPF4N25

FQPF4N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.

FQPF4N25 Maximum Ratings

Symbol	Parameter	FQPF4N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	2.8	A
I_D		1.75	A
I_DM	Drain Current - Pulsed (Note 1)	11.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	52	mJ
I_AR	Avalanche Current (Note 1)	2.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	32	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.26	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF4N25 Features

• 2.8A, 250V, R _DS(ON)= 1.75Ω @V_GS = 10 V
• Low gate charge ( typical 4.3 nC)
• Low Crss ( typical 4.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF4N50 Parameters

Technical/Catalog Information	FQPF4N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 1.15A, 10V
Input Capacitance (Ciss) @ Vds	460pF @ 25V
Power - Max	35W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF4N50 FQPF4N50

FQPF4N50 General Description

FQPF4N50 Maximum Ratings

Symbol	Parameter	FQPF4N50	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	2.3	A
I_D		1.46	A
I_DM	Drain Current - Pulsed (Note 1)	9.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	260	mJ
I_AR	Avalanche Current (Note 1)	2.3	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	35	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.28	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF4N50 Features

• 2.3A, 500V, R_DS(on) = 2.7Ω @V_GS = 10 V
• Low gate charge ( typical 10 nC)
• Low C_rss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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