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These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
300
FQPF47P06 Features
* -30A, -60V, RDS(on) @VGS = -10 V * Low gate charge ( typical 84 nC) * Low Crss ( typical 320 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * 175°C maximum junction temperature rating
FQPF4N20 Parameters
Technical/Catalog Information
FQPF4N20
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25° C
2.8A
Rds On (Max) @ Id, Vgs
1.4 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds
220pf @ 25V
Power - Max
27W
Packaging
Tube
Gate Charge (Qg) @ Vgs
6.5nC @ 10V
Package / Case
TO-220F
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FQPF4N20 FQPF4N20
FQPF4N20 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.
FQPF4N20 Maximum Ratings
Symbol
Parameter
FQPF4N20
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
2.8
A
1.6
A
IDM
Drain Current - Pulsed (Note 1)
11.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
52
mJ
IAR
Avalanche Current (Note 1)
2.8
A
EAR
Repetitive Avalanche Energy (Note 1)
2.7
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
27
W
0.22
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds