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FQPF46N15, FQPF47P06, FQPF4N20

FQPF46N15, FQPF47P06, FQPF4N20 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-220F  D/C:09+

FQPF46N15 Picture

FQPF46N15, FQPF47P06, FQPF4N20 Datasheet download

Five Points

Part Number: FQPF46N15

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 09+

Description: MOSFET N-CH 200V 2.8A TO-220F

 

 
 
 
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  • ALCON TECHNOLOGY CO., LTD.   China
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About FQPF46N15

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Datasheet: FQPF46N15

File Size: 777146 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About FQPF47P06

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Datasheet: FQPF47P06

File Size: 719952 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • Pack: TO Qty: 5000  Adddate: 2024-05-23
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
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  • FQP10N20C

  • Vendor: Fairchild D/C: 07+& Qty: 50 Note: Stock on hand  Adddate: 2024-05-23
  • Inquire Now
  • SAMT HK CO LTD   Hong
    Contact: Mr.NickLEE  
    Tel: 852--92323009
    Fax: 852--2890 7890
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  • FQP10N20C

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 50000  Adddate: 2024-05-23
  • Inquire Now
  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FQP10N20C

  • Vendor: FCS D/C: 07+& Qty: 50  Adddate: 2024-05-23
  • Inquire Now
  • Pu Hai Electronics   China
    Contact: Mr.Xu  
    Tel: 86-21-32515176
    Fax: --
    (13)
  • FQP10N60C

  • D/C: 03+&   Adddate: 2024-05-23
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About FQPF4N20

PDF/DataSheet Download

Datasheet: FQPF4N20

File Size: 743433 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQPF46N15 Parameters

Technical/Catalog InformationFQPF46N15
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C25.6A
Rds On (Max) @ Id, Vgs42 mOhm @ 12.8A, 10V
Input Capacitance (Ciss) @ Vds 3250pF @ 25V
Power - Max66W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF46N15
FQPF46N15

FQPF47P06 Parameters

Technical/Catalog InformationFQPF47P06
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs26 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max62W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF47P06
FQPF47P06

FQPF47P06 General Description

  These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

  This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQPF47P06 Maximum Ratings

Symbol Parameter FQPF47P06 Units
VDSS Drain-Source Voltage -60 V
ID
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100)
-30 A
-21.2 A
IDM Drain Current - Pulsed (Note 1) -120 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy  (Note 2) 820 mJ
IAR Avalanche Current  (Note 1) -30 A
EAR
Repetitive Avalanche Energy  (Note 1)
6.2 mJ
dv/dt
Peak Diode Recovery dv/dt  (Note 3)
-7.0 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
62 W
0.41 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +175
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300

FQPF47P06 Features

* -30A, -60V, RDS(on)  @VGS = -10 V 
* Low gate charge ( typical 84 nC)
* Low Crss ( typical  320 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

FQPF4N20 Parameters

Technical/Catalog InformationFQPF4N20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C2.8A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds 220pf @ 25V
Power - Max27W
PackagingTube
Gate Charge (Qg) @ Vgs6.5nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF4N20
FQPF4N20

FQPF4N20 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.

FQPF4N20 Maximum Ratings

Symbol
Parameter
FQPF4N20
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
2.8
A
1.6
A
IDM
Drain Current - Pulsed                (Note 1)
11.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy         (Note 2) 
52
mJ
IAR
Avalanche Current                      (Note 1)
2.8
A
EAR
Repetitive Avalanche Energy            (Note 1)                                        
2.7
mJ
dv/dt
Peak Diode Recovery dv/dt              (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
                           - Derate above 25°C
 
27
W
 
0.22
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C

FQPF4N20 Features

• 2.8A, 200V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical  5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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