MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:TO
FQPF30N06L, FQPF32N12V, FQPF32N12V2 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220F
D/C: TO
Description: MOSFET N-CH 120V 32A TO-220F
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PDF/DataSheet Download
Datasheet: FQPF30N06L
File Size: 669661 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF32N12V2
File Size: 878466 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF32N12V2
File Size: 878466 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQPF30N06L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 22.5A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 11.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 1040pF @ 25V |
| Power - Max | 38W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | TO-220F |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF30N06L FQPF30N06L |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
| Symbol | Parameter | FQPF30N06L | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
22.5 | A |
| 15.9 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 90 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 350 | mJ |
| IAR | Avalanche Current (Note 1) | 22.5 | A |
| EAR |
Repetitive Avalanche Energy (Note 1) | 3.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD |
Power Dissipation (TC = 25) - Derate above 25 |
38 | W |
| 0.25 | W/ | ||
| TJ,TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQPF32N12V2 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25° C | 32A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 1860pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF32N12V2 FQPF32N12V2 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
| Symbol | Parameter | FQP32N12V2 | FQPF32N12V2 | Units |
| VDSS | Drain-Source Voltage | 120 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
32 | 32* | A |
| 23 |
23* |
A | ||
| IDM | Drain Current - Pulsed (Note 1) | 128 | 128* | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 439 | mJ | |
| IAR | Avalanche Current (Note 1) | 32 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 15 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
150 | 50 | W |
| 1 |
0.3 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
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