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FQPF2P25, FQPF2P40, FQPF30N06

Table of contents:
Info of FQPF2P25
Info of FQPF2P40
Info of FQPF30N06

FQPF2P25, FQPF2P40, FQPF30N06 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+

FQPF2P25, FQPF2P40, FQPF30N06 Datasheet download

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Part Number: FQPF2P25

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 09+

Description: MOSFET N-CH 60V 21A TO-220F

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FQPF2P25 Parameters

Technical/Catalog Information	FQPF2P25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	4 Ohm @ 900mA, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	32W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.5nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF2P25 FQPF2P25

FQPF2P25 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

FQPF2P25 Maximum Ratings

Symbol	Parameter	FQPF2P25	Units
V_DSS	Drain-Source Voltage	-250	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-1.8	A
I_D		-1.14	A
I_DM	Drain Current - Pulsed (Note 1)	-7.2	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	120	mJ
I_AR	Avalanche Current (Note 1)	-1.8	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	32	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.26	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF2P25 Features

• -1.8A, -250V, R_DS(on) = 4.0Ω @V_GS = -10 V
• Low gate charge ( typical 6.5 nC)
• Low C_rss( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF2P40 Parameters

Technical/Catalog Information	FQPF2P40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	1.34A
Rds On (Max) @ Id, Vgs	6.5 Ohm @ 670mA, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	28W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF2P40 FQPF2P40

FQPF2P40 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

FQPF2P40 Maximum Ratings

Symbol	Parameter	FQPF2P40	Units
V_DSS	Drain-Source Voltage	-400	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-1.34	A
I_D		-0.85	A
I_DM	Drain Current - Pulsed (Note 1)	-5.36	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	120	mJ
I_AR	Avalanche Current (Note 1)	-1.34	A
E_AR	Repetitive Avalanche Energy (Note 1)	2.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	28	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.22	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF2P40 Features

• -1.34A, -400V, R_DS(on) = 6.5Ω @V_GS = -10 V
• Low gate charge ( typical 10 nC)
• Low C_rss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF30N06 Parameters

Technical/Catalog Information	FQPF30N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	40 mOhm @ 10.5A, 10V
Input Capacitance (Ciss) @ Vds	945pF @ 25V
Power - Max	39W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF30N06 FQPF30N06

FQPF30N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

FQPF30N06 Maximum Ratings

Symbol	Parameter	FQPF30N06	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	21	A
I_D		14.9	A
I_DM	Drain Current - Pulsed (Note 1)	84	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	280	mJ
I_AR	Avalanche Current (Note 1)	21	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.9	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	39	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.26	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 740H, I_AS = 21A, V_DD = 25V, R_G = 25 , Starting T_J = 25°C
3. I_SD 30A, di/dt 300A/s, V_DD BV_DSS, Starting T_J = 25°C

FQPF30N06 Features

• 21A, 60V, R_DS(on) = 0.04 @V_GS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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