MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:0509+
FQPF2N80, FQPF2N90, FQPF2NA90 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220F
D/C: 0509+
Description: MOSFET N-CH 900V 1.7A TO-220F
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PDF/DataSheet Download
Datasheet: FQPF2N80
File Size: 634141 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF2N90
File Size: 749681 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF2NA90
File Size: 692091 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQPF2N80 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 1.5A |
| Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 750mA, 10V |
| Input Capacitance (Ciss) @ Vds | 550pF @ 25V |
| Power - Max | 35W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF2N80 FQPF2N80 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter | FQPF2N80 | Units |
| VDSS | Drain-Source Voltage | 800 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
1.5 | A |
| 0.95 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 6.0 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 180 | mJ |
| IAR | Avalanche Curren (Note 1) | 1.5 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
35 | W |
| 0.28 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
| Technical/Catalog Information | FQPF2N90 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 1.4A |
| Rds On (Max) @ Id, Vgs | 7.2 Ohm @ 700mA, 10V |
| Input Capacitance (Ciss) @ Vds | 500pF @ 25V |
| Power - Max | 35W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF2N90 FQPF2N90 |
| Technical/Catalog Information | FQPF2NA90 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 1.7A |
| Rds On (Max) @ Id, Vgs | 5.8 Ohm @ 850mA, 10V |
| Input Capacitance (Ciss) @ Vds | 680pF @ 25V |
| Power - Max | 39W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF2NA90 FQPF2NA90 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
|
Symbol |
Parameter |
FQP2NA90 |
Units |
|
VDSS |
Drain-Source Voltage |
900 |
V |
|
ID |
Drain Current - Continuous (TC = 25 ) 2.8 A - Continuous (TC = 100) |
1.7 |
A |
|
1.07 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
6.8 |
A |
|
VGSS |
Gate-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
310 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
1.7 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
3.9 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25) - Derate above 25 |
39 |
W |
|
0.31 |
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
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