MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+
FQPF22N30, FQPF22P10, FQPF24N08 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220F
D/C: 09+
Description: MOSFET P-CH 100V 13.2A TO-220F
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PDF/DataSheet Download
Datasheet: FQPF22N30
File Size: 755965 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF22P10
File Size: 640718 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQPF22N30 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
| Power - Max | 56W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF22N30 FQPF22N30 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.
|
Symbol |
Parameter |
FQPF22N30 |
Units |
|
VDSS |
Drain-Source Voltage |
300 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
12 |
A |
|
7.6 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
48 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1000 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
12 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
5.6 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
56 |
W
|
|
0.45 |
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQPF22P10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 13.2A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 6.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF22P10 FQPF22P10 |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
| Symbol | Parameter | FQPF22P10 | Units |
| VDSS | Drain-Source Voltage | -100 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-13.2 | A |
|
-9.3 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) | -52.3 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 710 | mJ |
| IAR | Avalanche Current (Note 1) | -13.2 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | -6.0 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
45 | W |
|
0.3 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
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