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FQPF1P50, FQPF20N06, FQPF20N06L

Table of contents:
Info of FQPF1P50
Info of FQPF20N06
Info of FQPF20N06L

FQPF1P50, FQPF20N06, FQPF20N06L Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+

FQPF1P50, FQPF20N06, FQPF20N06L Datasheet download

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Part Number: FQPF1P50

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 09+

Description: MOSFET N-CH 60V 15.7A TO-220F

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FQPF1P50 Parameters

Technical/Catalog Information	FQPF1P50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	1.03A
Rds On (Max) @ Id, Vgs	10.5 Ohm @ 515mA, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	28W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF1P50 FQPF1P50

FQPF1P50 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

FQPF1P50 Maximum Ratings

Symbol	Parameter	FQPF1P50	Units
V_DSS	Drain-Source Voltage	-500	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	-1.03	A
I_D		-0.65	A
I_DM	Drain Current - Pulsed (Note 1)	-4.12	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	110	mJ
I_AR	Avalanche Current (Note 1)	-1.03	A
E_AR	Repetitive Avalanche Energy (Note 1)	2.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	28	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.22	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 187mH, I_AS = -1.03A, V_DD = -50V, R_G = 25 , Starting T_J= 25°C
3. I_SD -1.5A, di/dt 200A/s, V_DD BVDSS, Starting T_J= 25°C

FQPF1P50 Features

• -1.03A, -500V, R_DS(on) = 10.5 @V_GS = -10 V
• Low gate charge ( typical 11 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF20N06 Parameters

Technical/Catalog Information	FQPF20N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	60 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds	590pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF20N06 FQPF20N06

FQPF20N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products

FQPF20N06 Maximum Ratings

Symbol	Parameter	FQPF20N06	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	15	A
I_D		10.7	A
I_DM	Drain Current - Pulsed (Note 1)	60	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	155	mJ
I_AR	Avalanche Current (Note 1)	15	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	30	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.2	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 800H, I_AS = 15A, V_DD = 25V, R_G = 25 , Starting T_J= 25°C
3. I_SD 20A, di/dt 300A/s, V_DD BV_DSS, Starting T_J= 25°C

FQPF20N06 Features

• 15A, 60V, R_DS(on) = 0.06 @V_GS = 10 V
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQPF20N06L Parameters

Technical/Catalog Information	FQPF20N06L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	15.7A
Rds On (Max) @ Id, Vgs	55 mOhm @ 7.85A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 5V
Package / Case	TO-220F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF20N06L FQPF20N06L

FQPF20N06L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQPF20N06L Maximum Ratings

Symbol	Parameter	FQPF20N06L	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	15.7	A
I_D		11.1	A
I_DM	Drain Current - Pulsed (Note 1)	62.8	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	170	mJ
I_AR	Avalanche Current (Note 1)	15.7	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	30	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.2	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF20N06L Features

* 15.7A, 60V, R_DS(on) = 0.055 @V_GS = 10 V
* Low gate charge ( typical 9.5 nC)
* Low Crss ( typical 35 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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