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FQPF18N20V2, FQPF18N50V2, FQPF19N10

Table of contents:
Info of FQPF18N20V2
Info of FQPF18N50V2
Info of FQPF19N10

FQPF18N20V2, FQPF18N50V2, FQPF19N10 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:TO

FQPF18N20V2, FQPF18N50V2, FQPF19N10 Datasheet download

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Part Number: FQPF18N20V2

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: TO

Description: MOSFET N-CH 100V 13.6A TO-220F

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FQPF18N20V2 Parameters

Technical/Catalog Information	FQPF18N20V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	140 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF18N20V2 FQPF18N20V2

FQPF18N20V2 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQPF18N20V2 Maximum Ratings

Symbol	Parameter	FQP10N20C	FQPF10N20C	Units
V_DSS	Drain-Source Voltage	200		V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	18	18	A
I_D		11.9	11.9	A
I_DM	Drain Current - Pulsed (Note 1)	72	72	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	340		mJ
I_AR	Avalanche Current (Note 1)	18		A
E_AR	Repetitive Avalanche Energy (Note 1)	12.3		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	123	40	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.99	0.32	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150		°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300		°C

FQPF18N20V2 Features

• 18A, 200V, R_DS(on) = 0.14Ω @V_GS = 10 V
• Low gate charge ( typical 20 nC)
• Low C_rss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF18N50V2 Parameters

Technical/Catalog Information	FQPF18N50V2
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	265 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	3290pF @ 25V
Power - Max	69W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	55nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Other Names	FQPF18N50V2 FQPF18N50V2

FQPF18N50V2 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

FQPF18N50V2 Maximum Ratings

Symbol	Parameter	FQP18N50V2	FQPF18N50V2	Units
V_DSS	Drain-Source Voltage	500		V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	18	18	A
I_D		12.1	12.1	A
I_DM	Drain Current - Pulsed (Note 1)	72	72	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	330		mJ
I_AR	Avalanche Current (Note 1)	18		A
E_AR	Repetitive Avalanche Energy (Note 1)	25		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	208	69	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	1.67	0.55	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175		°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.83mH, I_AS = 18A, V_DD = 50V, R_G = 25 , Starting T_J= 25°C
3. I_SD 18A, di/dt 200A/s, V_DD BV_DSS, Starting T_J= 25°C

FQPF18N50V2 Features

• 18A, 500V, R_DS(on) = 0.265 @V_GS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF19N10 Parameters

Technical/Catalog Information	FQPF19N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	13.6A
Rds On (Max) @ Id, Vgs	100 mOhm @ 6.8A, 10V
Input Capacitance (Ciss) @ Vds	780pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF19N10 FQPF19N10

FQPF19N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

FQPF19N10 Maximum Ratings

Symbol	Parameter	FQPF19N10	Units
V_DSS	Drain-Source Voltage	100	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C= 100)	13.6	A
I_D		9.6	A
I_DM	Drain Current - Pulsed (Note 1)	54.4	A
V_GSS	Gate-Source Voltage	± 25	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	220	mJ
I_AR	Avalanche Current (Note 1)	13.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	3.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.0	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	38	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.25	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +175
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQPF19N10 Features

* 13.6A, 100V, R_DS(on) = 0.1 @V_GS = 10 V
* Low gate charge ( typical 19 nC)
* Low Crss ( typical 32 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating

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