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FQPF15P12, FQPF16N15, FQPF16N25

FQPF15P12, FQPF16N15, FQPF16N25 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-220  D/C:06+

FQPF15P12 Picture

FQPF15P12, FQPF16N15, FQPF16N25 Datasheet download

Five Points

Part Number: FQPF15P12

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 06+

Description: MOSFET N-CH 250V 9.5A TO-220F

 

 
 
 
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About FQPF15P12

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Datasheet: FQPF15P12

File Size: 873022 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About FQPF16N15

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Datasheet: FQPF16N15

File Size: 740233 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
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    Fax: 86-10-62102720
    (5)
  • FQP10N60C

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  • FQP11N40C

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About FQPF16N25

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Datasheet: FQPF16N25

File Size: 755302 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQPF15P12 Parameters

Technical/Catalog InformationFQPF15P12
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs200 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 25V
Power - Max41W
PackagingTube
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF15P12
FQPF15P12

FQPF15P12 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQPF15P12 Maximum Ratings

Symbol Parameter FQP15P12 FQPF15P12 Units
VDSS Drain-Source Voltage -120 V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-15 -15* A
-10.6

-10.6*

A
IDM Drain Current - Pulsed (Note 1) -60 -60* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1157 mJ
IAR Avalanche Current (Note 1) -15 A
EAR Repetitive Avalanche Energy (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
100 41 W
0.67

0.27

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
* Drain current limited by maximum junction temperature.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, IAS = -15A, VDD = -50V, RG = 25 , Starting TJ = 25°C
3. ISD -15A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25°C

FQPF15P12 Features

• -15A, -120V, RDS(on) = 0.2 @VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQPF16N15 Parameters

Technical/Catalog InformationFQPF16N15
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C16.4A
Rds On (Max) @ Id, Vgs160 mOhm @ 5.8A, 10V
Input Capacitance (Ciss) @ Vds 910pF @ 25V
Power - Max53W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF16N15
FQPF16N15

FQPF16N25 Parameters

Technical/Catalog InformationFQPF16N25
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs230 mOhm @ 4.75A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF16N25
FQPF16N25

FQPF16N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch motor power supply.

FQPF16N25 Maximum Ratings

Symbol
Parameter
FQPF16N25
Units
VDSS
Drain-Source Voltage
250
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
9.5
A
6.0
A
IDM
Drain Current - Pulsed          (Note 1)
38
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy  (Note 2) 
560
mJ
IAR
Avalanche Current               (Note 1)
9.5
A
EAR
Repetitive Avalanche Energy     (Note 1)                                        
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt       (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
                           - Derate above 25°C
 
50
W
 
0.4
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C

FQPF16N25 Features

• 9.5A, 250V, R DS(ON)= 0.23Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
 

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