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FQPF14N30, FQPF17N10, FQPF17N40T

FQPF14N30, FQPF17N10, FQPF17N40T Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-220F  D/C:09+

FQPF14N30 Picture

FQPF14N30, FQPF17N10, FQPF17N40T Datasheet download

Five Points

Part Number: FQPF14N30

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 09+

Description: MOSFET N-CH 400V 9.5A TO-220F

 

 
 
 
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About FQPF14N30

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Datasheet: FQPF14N30

File Size: 734512 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About FQP10N20

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Datasheet: FQP10N20

File Size: 793262 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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    Contact: Ms.Alice  
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  • Pu Hai Electronics   China
    Contact: Mr.Xu  
    Tel: 86-21-32515176
    Fax: --
    (13)
  • FQP10N60C

  • D/C: 03+&   Adddate: 2024-11-28
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)
  • FQP10N60C

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  • FQP11N40C

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About FQP10N20

PDF/DataSheet Download

Datasheet: FQP10N20

File Size: 793262 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQPF14N30 Parameters

Technical/Catalog InformationFQPF14N30
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs290 mOhm @ 4.25A, 10V
Input Capacitance (Ciss) @ Vds 1360pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF14N30
FQPF14N30

FQPF14N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.

FQPF14N30 Maximum Ratings

Symbol
Parameter
FQPF14N30
Units
VDSS
Drain-Source Voltage
300
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
8.5
A
5.4
A
IDM
Drain Current - Pulsed          (Note 1)
34
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy  (Note 2) 
600
mJ
IAR
Avalanche Current               (Note 1)
8.5
A
EAR
Repetitive Avalanche Energy     (Note 1)                                        
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt       (Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
                           - Derate above 25°C
 
50
W
 
0.4
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C

FQPF14N30 Features

• 8.5A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical  23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF17N40T Parameters

Technical/Catalog InformationFQPF17N40T
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs270 mOhm @ 4.75A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 25V
Power - Max56W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF17N40T
FQPF17N40T

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