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FQPF14N30, FQPF17N10, FQPF17N40T

Table of contents:
Info of FQPF14N30
Info of FQPF17N10
Info of FQPF17N40T

FQPF14N30, FQPF17N10, FQPF17N40T Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+

FQPF14N30, FQPF17N10, FQPF17N40T Datasheet download

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Part Number: FQPF14N30

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220F

D/C: 09+

Description: MOSFET N-CH 400V 9.5A TO-220F

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FQPF14N30 Parameters

Technical/Catalog Information	FQPF14N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	8.5A
Rds On (Max) @ Id, Vgs	290 mOhm @ 4.25A, 10V
Input Capacitance (Ciss) @ Vds	1360pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF14N30 FQPF14N30

FQPF14N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.

FQPF14N30 Maximum Ratings

Symbol	Parameter	FQPF14N30	Units
V_DSS	Drain-Source Voltage	300	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	8.5	A
I_D		5.4	A
I_DM	Drain Current - Pulsed (Note 1)	34	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	600	mJ
I_AR	Avalanche Current (Note 1)	8.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	5.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	50	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.4	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQPF14N30 Features

• 8.5A, 300V, R_DS(on) = 0.29Ω @V_GS = 10 V
• Low gate charge ( typical 30 nC)
• Low C_rss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF17N40T Parameters

Technical/Catalog Information	FQPF17N40T
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	9.5A
Rds On (Max) @ Id, Vgs	270 mOhm @ 4.75A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 25V
Power - Max	56W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF17N40T FQPF17N40T

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