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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.
FQPF14N30 Maximum Ratings
Symbol
Parameter
FQPF14N30
Units
VDSS
Drain-Source Voltage
300
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
8.5
A
5.4
A
IDM
Drain Current - Pulsed (Note 1)
34
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
600
mJ
IAR
Avalanche Current (Note 1)
8.5
A
EAR
Repetitive Avalanche Energy (Note 1)
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
50
W
0.4
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds