MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:09+
FQPF12P10, FQPF12P20, FQPF12P20XDTU Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220F
D/C: 09+
Description: MOSFET P-CH 200V 7.3A TO-220F
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PDF/DataSheet Download
Datasheet: FQPF12P10
File Size: 646170 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQPF12P20
File Size: 646304 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQPF12P10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 8.2A |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 4.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
| Power - Max | 38W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF12P10 FQPF12P10 |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
|
Symbol |
Parameter |
FQPF17P10 |
Units |
|
VDSS |
Drain-Source Voltage |
-100 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-8.2 |
A |
|
-5.8 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
-32.8 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
370 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-8.2 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
3.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)- Derate above 25°C |
38 |
W |
|
0.25 |
W/°C | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQPF12P20 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 470 mOhm @ 3.65A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF12P20 FQPF12P20 |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
|
Symbol |
Parameter |
FQPF12P20 |
Units |
|
VDSS |
Drain-Source Voltage |
-200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-7.3 |
A |
|
-4.6 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
-29.2 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-7.3 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
5.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
50 |
W
|
|
0.4 |
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
| Technical/Catalog Information | FQPF12P20XDTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 470 mOhm @ 3.65A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF12P20XDTU FQPF12P20XDTU |
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