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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.
FQPF12N20 Maximum Ratings
Symbol
Parameter
FQPF12N20
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
8.2
A
5.2
A
IDM
Drain Current - Pulsed (Note 1)
32.8
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
210
mJ
IAR
Avalanche Current (Note 1)
8.2
A
EAR
Repetitive Avalanche Energy (Note 1)
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
45
W
0.36
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply, motor control.
FQPF12N20L Maximum Ratings
Symbol
Parameter
FQP8P10
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
8.2
A
5.2
A
IDM
Drain Current - Pulsed (Note 1)
32.8
A
VGSS
Gate-Source Voltage
± 20
V
EAS
Single Pulsed Avalanche Energy (Note 2)
210
mJ
IAR
Avalanche Current (Note 1)
8.2
A
EAR
Repetitive Avalanche Energy (Note 1)
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
45
W
0.36
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C
FQPF12N20L Features
• 8.2A, 200V, R DS(on) = 0.28Ω @VGS = 10 V • Low gate charge ( typical 16 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirement allowing direct opration from logic drivers
FQPF12N60 Parameters
Technical/Catalog Information
FQPF12N60
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25° C
5.8A
Rds On (Max) @ Id, Vgs
700 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds
1900pF @ 25V
Power - Max
55W
Packaging
Tube
Gate Charge (Qg) @ Vgs
54nC @ 10V
Package / Case
TO-220F
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FQPF12N60 FQPF12N60
FQPF12N60 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.