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FQPF10N60C, FQPF10N60CF, FQPF11N40

FQPF10N60C, FQPF10N60CF, FQPF11N40 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:FSC  D/C:07+

FQPF10N60C Picture

FQPF10N60C, FQPF10N60CF, FQPF11N40 Datasheet download

Five Points

Part Number: FQPF10N60C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: FSC

D/C: 07+

Description: MOSFET N-CHAN 600V 9A TO-220F

 

 
 
 
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About FQPF10N60C

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Datasheet: FQPF10N60C

File Size: 855857 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About FQP10N20

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Datasheet: FQP10N20

File Size: 793262 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FQP10N60C

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    Fax: 86-10-62102720
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  • FQP10N60C

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  • TODENKI ELECTRONICS COMPANY   China
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About FQPF11N40

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Datasheet: FQPF11N40

File Size: 735291 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FQPF10N60C Parameters

Technical/Catalog InformationFQPF10N60C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs730 mOhm @ 4.75A, 10V
Input Capacitance (Ciss) @ Vds 2040pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs57nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF10N60C
FQPF10N60C

FQPF10N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQPF10N60C Maximum Ratings

Symbol Parameter FQP10N60C FQPF10N60C Units
VDSS Drain-Source Voltage 600 600 V
ID Drain Current - Continuous (TC = 25°C) 9.5 9.5 * A
ID Drain Current - Continuous (TC = 100°C) 3.3 3.3* A
IDM Drain Current - Pulsed (Note 1) 38 38* A
VGSS Gate-Source Voltage ± 30 ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 700 700 mJ
IAR Single Pulsed Avalanche Energy (Note 2) 9.5 9.5 A
EAR Repetitive Avalanche Energy 15.6 15.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 4.5 V/ns
PD Power Dissipation (TC = 25°C) 156 50 W
PD - Derate above 25°C 1.25 0.4 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 300 °C
* Drain current limited by maximum junction temperature.

FQPF10N60C Features

• 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF10N60CF Parameters

Technical/Catalog InformationFQPF10N60CF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs800 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 2040pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs57nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF10N60CF
FQPF10N60CF

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