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FQP9N25, FQP9N25C, FQP9N30

Table of contents:
Info of FQP9N25
Info of FQP9N25C
Info of FQP9N30

FQP9N25, FQP9N25C, FQP9N30 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+

FQP9N25, FQP9N25C, FQP9N30 Datasheet download

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Part Number: FQP9N25C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 09+

Description: MOSFET N-CH 300V 9A TO-220

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FQP9N25 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch motor power supply.

FQP9N25 Maximum Ratings

Symbol	Parameter	FQP9N25	Units
V_DSS	Drain-Source Voltage	250	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	9.4	A
I_D		5.9	A
I_DM	Drain Current - Pulsed (Note 1)	37.6	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	165	mJ
I_AR	Avalanche Current (Note 1)	9.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	90	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.72	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQP9N25 Features

• 9.4A, 250V, R _DS(ON)= 0.42Ω @V_GS = 10 V
• Low gate charge ( typical 15.5 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP9N25C Parameters

Technical/Catalog Information	FQP9N25C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	8.8A
Rds On (Max) @ Id, Vgs	430 mOhm @ 4.4A, 10V
Input Capacitance (Ciss) @ Vds	710pF @ 25V
Power - Max	74W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP9N25C FQP9N25C

FQP9N25C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

FQP9N25C Maximum Ratings

Symbol	Parameter	FQP9N25C	FQPF9N25C	Units
V_DSS	Drain-Source Voltage	250		V
I_D	Drain Current - Continuous (T_C= 25°C) - Continuous (T_C = 100°C)	8.8	8.8 *	A
I_D		5.6	5.6 *	A
I_DM	Drain Current - Pulsed (Note 1)	35.2	35.2 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	285		mJ
I_AR	Avalanche Current (Note 1)	8.8		A
E_AR	Repetitive Avalanche Energy (Note 1)	7.4		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	74	38	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.59	0.3	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8' from case for 5 seconds	300

FQP9N25C Features

• 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V
• Low gate charge ( typical 26.5 nC)
• Low Crss ( typical 45.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQP9N30 Parameters

Technical/Catalog Information	FQP9N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	450 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	750pF @ 25V
Power - Max	98W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP9N30 FQP9N30

FQP9N30 General Description

FQP9N30 Maximum Ratings

Symbol	Parameter	FQP9N30	Units
V_DSS	Drain-Source Voltage	300	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	9.0	A
I_D		5.7	A
I_DM	Drain Current - Pulsed (Note 1)	36	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	420	mJ
I_AR	Avalanche Current (Note 1)	9.0	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.8	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	98	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.78	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

FQP9N30 Features

• 9.0A, 300V, R_DS(on) = 0.45Ω @V_GS = 10 V
• Low gate charge ( typical 17 nC)
• Low C_rss( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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