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FQP7N40, FQP7N60, FQP7N65C

Table of contents:
Info of FQP7N40
Info of FQP7N60
Info of FQP7N65C

FQP7N40, FQP7N60, FQP7N65C Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:07+

FQP7N40, FQP7N60, FQP7N65C Datasheet download

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Part Number: FQP7N40

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 07+

Description: MOSFET N-CH 650V 7A TO-220

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FQP7N40 Parameters

Technical/Catalog Information	FQP7N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	800 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	780pF @ 25V
Power - Max	98W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP7N40 FQP7N40

FQP7N60 Parameters

Technical/Catalog Information	FQP7N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7.4A
Rds On (Max) @ Id, Vgs	1 Ohm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds	1430pF @ 25V
Power - Max	142W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP7N60 FQP7N60

FQP7N65C Parameters

Technical/Catalog Information	FQP7N65C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	1245pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP7N65C FQP7N65C

FQP7N65C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQP7N65C Maximum Ratings

Symbol	Parameter	FQP7N65C	FQPF7N65C	Units
V_DSS	Drain-Source Voltage	650		V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C = 100)	7	7*	A
I_D		4.2	4.2*	A
I_DM	Drain Current - Pulsed (Note 1)	28	28*	A
V_GSS	Gate-Source Voltage	±30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	212		mJ
I_AR	Avalanche Current (Note 1)	7		A
E_AR	Repetitive Avalanche Energy (Note 1)	1.6		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	160	52	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	1.28	0.42	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

FQP7N65C Features

·7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
·Low gate charge ( typical 28 nC)
·Low Crss ( typical 12 pF)
·Fast switching
·100% avalanche tested
·Improved dv/dt capability

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